
Key enabling technology for the commercially viable implementation of communication systems at 300 GHz is the metamorphic HEMT (high electron mobility transistor) of the Fraunhofer IAF. As of today, the Fraunhofer IAF offers optimized mHEMTs with gate-lengths of 100 nm, 50 nm, 35 nm and 20 nm. The 35nm is selected in this project for its best compromise between cost, integration density and performance at 300 GHz.
100 nm |
50 nm | 35 nm | 20 nm | |
---|---|---|---|---|
In content (%) | 65 | 80 | 80 | 100 |
gm,max (mS/mm) | 1300 | 1800 | 2500 | 2850 |
fT (GHz) | 220 | 375 | 515 | 600 |
fmax (GHz) | 300 | 600 | ≈1000 |
≈1000 |
High-frequency figure of merits of the Fraunhofer mHEMT technologies with different gate lengths and Indium content in the transistor channel.
The mHEMT technologies at Fraunhofer IAF are ideal candidates when broadband front-end MMICs are needed.
Leuther, A.; Tessmann, A.; Kallfass, I.; Losch, R.; Seelmann-Eggebert, M.; Wadefalk, N.; Schafer, F.; Gallego Puyol, J.D.; Schlechtweg, M.; Mikulla, M.; Ambacher, O. In: Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on , vol., no., pp.188-191, 10-14 May 2009
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5012475
Leuther, A.; Tessmann, A.; Massler, H.; Losch, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O. In: Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on , vol., no., pp.1-4, 25-29 May 2008
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=4702910
Leuther, A.; Koch, S.; Tessmann, A.; Kallfass, I.; Merkle, T.; Massler, H.; Loesch, R.; Schlechtweg, M.; Saito, S.; Ambacher, O. In: Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials , vol., no., pp.1-4, 22-26 May 2011
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=5978292